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| PJSMS05 SERIES QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION This Quad TVS/Zener Array family have been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated solution to protect up to 4 data lines where the board space is a premium. SPECIFICATION FEATURES 350W Power Dissipation (8/20s Waveform) Low Leakage Current, Maximum of 5A at rated voltage Very Low Clamping Voltage IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance Industry Standard Surface Mount Package SOT23-6L 100% Tin Matte Finish (RoHS Compliance) 1 6 5 4 APPLICATIONS 1 2 3 Personal Digital Assistant (PDA) SIM Card Port Protection (Mobile Phone) Portable Instrumentation Mobile Phones and Accessories Memory Card Port Protection TVS PJSMS05 PJSMS12 PJSMS15 PJSMS24 Symbol P pp V ESD TJ Tstg Value 350 >25 SOT23-6L MAXIMUM RATINGS (Per Device) Rating Peak Pulse Power (8/20s Waveform) ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Marking Code M05 M12 M15 M24 Units W kV C C -50 to +125 -50 to +150 ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25C PJSMS05 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20s) Clamping Voltage (8/20s) Off State Junction Capacitance Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj Cj I BR = 1mA VR = 5V I pp = 5A I pp = 24A 0 Vdc Bias f = 1MHz Between I/O pins and pin 2, 5 5 Vdc Bias f = 1MHz Between I/O pins and pin 2, 5 Conditions Min Typical Max 5 Units V V 6 5 9.8 13 225 125 A V V pF pF 5/11/2006 Page 1 www.panjit.com PJSMS05 SERIES ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25C PJSMS12 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20s) Clamping Voltage (8/20s) Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj I BR = 1mA VR = 12V I pp = 5A I pp = 15A 0 Vdc Bias f = 1MHz Between I/O pins and pin 2, 5 Conditions Min Typical Max 12 Units V V 13.3 1 20 25 100 A V V pF PJSMS15 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20s) Clamping Voltage (8/20s) Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj I BR = 1mA VR = 15V I pp = 5A I pp = 12A 0 Vdc Bias f = 1MHz Between I/O pins and pin 2, 5 Conditions Min Typical Max 15 Units V V 16.7 1 24 29 80 A V V pF PJSMS24 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20s) Clamping Voltage (8/20s) Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj I BR = 1mA VR = 24V I pp = 5A I pp = 8A 0 Vdc Bias f = 1MHz Between I/O pins and pin 2, 5 Conditions Min Typical Max 24 Units V V 26.7 1 40 44 60 A V V pF 5/11/2006 Page 2 www.panjit.com PJSMS05 SERIES TYPICAL CHARACTERISTICS TJ = 25C unless otherwise noted Surge Pulse Waveform Definition N on-R epetitive Peak Pulse Power vs Pulse Time Pulse Waveform Peak Pulse Power - Ppp (W) 110 100 90 80 70 60 50 40 30 20 10 0 0 1000 100 10 1 0.1 0.01 1 10 100 1000 Pulse D uration, sec Percent of Ipp 50% of Ipp @ 20s Rise time 10-90% - 8s 5 10 15 tim e, sec 20 25 30 Clamping Voltage vs. Peak current 45 40 35 30 25 20 15 10 5 0 0 5 200 PJS 24 MS Off-State Capacitance per Device - 1MHz Clamping voltage, V 180 Capacitance, pF 160 140 120 100 80 60 40 20 0 PJSMS05 PJS 15 MS PJS 12 MS PJS 05 MS 10 15 20 25 30 Ipp, A (8/20sec) 1 2 Bias, Vdc 3 4 5 5/11/2006 Page 3 www.panjit.com PJSMS05 SERIES TYPICAL APPLICATION EXAMPLE AND PACKAGE DIMENSIONS Data Line 1 Data Line 2 Data Line 3 Data Line 4 PJSMSxx Ground (Pins 2 and 5) (c) Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. 5/11/2006 Page 4 www.panjit.com |
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